Al2O3修饰层对抑制CdSe量子点敏化太阳电池界面电子复合的研究
收稿日期: 2015-06-29
修回日期: 2015-07-16
网络出版日期: 2015-08-30
基金资助
国家自然科学基金面上项目（21073193；21273241）
Influence of Al2O3 Buffer Layer on Interface Charge Recombination in CdSe Quantum Dot-sensitized Solar Cells
Received date: 2015-06-29
Revised date: 2015-07-16
Online published: 2015-08-30
梁柱荣 , 毕卓能 , 靳 虎 , 梅凤娇 , 徐雪青 . Al2O3修饰层对抑制CdSe量子点敏化太阳电池界面电子复合的研究[J]. 新能源进展, 2015 , 3(4) : 245 -250 . DOI: 10.3969/j.issn.2095-560X.2015.04.001
Quantum dot-sensitized solar cells (QDSSCs) have attracted great interest owing to their low fabrication cost. However, the power conversion efficiency (PCE) is relatively low because of the high density of surface states in quantum dots (QDs), and severe surface and interface electron recombination. In this work, we utilized Al2O3 as the modification layer at the TiO2/CdSe QDs interface, and adopted the electrochemical impedance spectroscopy (EIS) and open-circuit voltage decay measurement to investigate the effect of Al2O3 on the inhibition of the interfacial electron recombination. The results revealed that the modification layer increased the conduction band edge of TiO2 and reduced the TiO2/QDs interface defects, which retarded the interface electron recombination and therefore significantly improved the short-circuit current, open-circuit voltage, fill factor and hence the power conversion efficiency of the devices.
Key words： quantum dot; solar cell; Al2O3; interface modification; electron recombination
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