晶体缺陷对多晶硅太阳电池反向漏电影响研究
收稿日期: 2015-09-24
修回日期: 2015-11-04
网络出版日期: 2015-12-30
Impact of Crystal Defects on Shunting of Mutlicrystalline Silicon Solar Cells
Received date: 2015-09-24
Revised date: 2015-11-04
Online published: 2015-12-30
陈文浩 , 黄红娜 , 刘仁中 , 张 斌 , 李红波 . 晶体缺陷对多晶硅太阳电池反向漏电影响研究[J]. 新能源进展, 2015 , 3(6) : 459 -463 . DOI: 10.3969/j.issn.2095-560X.2015.06.008
Multicrystaline silicon materials used for solar cells are usually under poor control of temperature and stress during the casting which may induce defects. Two kinds of abnormal solar cells, “black yarn” solar cells and dotted burnthrough solar cells, were studied in this paper. These two solar cells show severe reverse linear shunt current on the electrical properties. By observing the microstructures of the surface and cleavage plane on the abnormal areas, we find the ultimate reason of these two kinds of reverse currents is that there are dislocations or other crystal defects in the abnormal areas. The reverse current caused by defects could lead to local overheating of the solar cells under operation. This phenomenon may bring huge risk to the photovoltaic power generation systems.
Key words： multicrystalline silicon; crystal defects; reverse current; solar cell
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