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红色荧光体增强型硅基光电二极管的频谱响应研究

  • 李上宾 ,
  • 黄博扬 ,
  • 李国强 ,
  • 陈 明 ,
  • 罗江华 ,
  • 徐正元
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  • 1. 中科院无线光电通信重点实验室,中国科学技术大学信息学院,合肥 230026;
    2. 华南理工大学,发光材料与器件国家重点实验室,广州 510640;
    3. 东南大学信息科学与工程学院,移动通信国家重点实验室,南京 210096;
    4. 佛山市南海区联合广东新光源产业创新中心,广东 佛山 528226
李上宾 (1974-),男,博士,副研究员,中国科学技术大学无线光通信与网络研究中心副研究员/副主任,主要从事LED 可见光通信收发器件的设计、高速蓝光探测器研制及无线光电技术应用系统的研发。

收稿日期: 2015-12-21

  修回日期: 2016-08-30

  网络出版日期: 2016-10-28

基金资助

广东省重大科技专项(2014B010119001)

Enhancement of Frequency Responsibility of Si PIN-PD via Additional Red Phosphor Film

  • LI Shang-bin ,
  • HUANG Bo-yang ,
  • LI Guo-qiang ,
  • CHEN Ming ,
  • LUO Jiang-hua ,
  • XU Zheng-yuan
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  • 1. CAS Key Laboratory of Wireless-Optical Communications, School of Information Science and Technology, University of Science and Technology of China, Hefei 230026, China;
    2. State Key Laboratory of Luminescent Materials and Devices, South China University of Technology, Guangzhou 510640, China;
    3. National Mobile Communications Research Laboratory, School of Information Science and Engineering, Southeast University, Nanjing 210096, China;
    4. Guangdong Solid State Lighting Industry Innovation Center, Guangdong Foshan 528226, China

Received date: 2015-12-21

  Revised date: 2016-08-30

  Online published: 2016-10-28

摘要

一般硅基光电二极管对红光或红外光的响应要强于对蓝光或紫外光的响应。本文研究了在硅基二极管表面粘附红色荧光体对375 nm近紫外光响应的增强效应。实验结果表明:红色荧光体层粘附的光电二极管能有效提高对近紫外光的响应度、灵敏度,并且对硅基光电二极管频率响应带宽的影响并不显著。

本文引用格式

李上宾 , 黄博扬 , 李国强 , 陈 明 , 罗江华 , 徐正元 . 红色荧光体增强型硅基光电二极管的频谱响应研究[J]. 新能源进展, 2016 , 4(5) : 341 -344 . DOI: 10.3969/j.issn.2095-560X.2016.05.001

Abstract

Ordinarily, the Si PIN photodiode tends to be more responsive to the NIR or red light than blue light or NUV light. Here, we studied the role of an additional red phosphor film on the enhancement of NUV 375 nm responsibility of Si PIN photodiode. The experimental results show that the red phosphor film can effectively improve the responsibility and sensitivity of Si PIN photodiode. Meanwhile, the bandwidth of the frequency response of such a photodetector is not significantly affected by the red phosphor.

参考文献

[1] KOMINE T, NAKAGAWA M. Fundamental analysis for visible-light communication system using LED lights[J]. IEEE transactions on consumer electronics, 2004, 50(1): 100-107. DOI: 10.1109/TCE.2004.1277847.

[2] CUI K Y, CHEN G, XU Z Y, et al. Line-of-sight visible light communication system design and demonstration[C] // 2010 7th International Symposium on Communication Systems Networks and Digital Signal Processing (CSNDSP). Newcastle, UK: IEEE, 2010: 621-625.

[3] KALYVAS N, LIAPARINOS P, MICHAIL C, et al. Studying the luminescence efficiency of Lu2O3: Eu nanophosphor material for digital X-ray imaging applications[J]. Applied physics A, 2012, 106(1): 131-136. DOI: 10.1007/s00339-011-6640-5.

[4] KALIVAS N, COSTARIDOU L, KANDARAKIS I, et al. Optical gain signal-to-noise ratio transfer efficiency as an index for ranking of phosphor-photodetector combinations used in X-ray medical imaging[J]. Applied physics A, 2004, 78(6): 915-919. DOI: 10.1007/s00339-003-2089-5.

[5] TRUPKE T, GREEN M A, WÜRFEL P. Improving solar cell efficiencies by up-conversion of sub-band-gap light[J]. Journal of applied physics, 2002, 92(7): 4117-4122. DOI: 10.1063/1.1505677.

[6] SHALAV A, RICHARDS B S, GREEN M A. Luminescent layers for enhanced silicon solar cell performance: Up-conversion[J]. Solar energy materials and solar cells, 2007, 91(9): 829-842. DOI: 10.1016/ j.solmat.2007.02.007.

[7] TRUPKE T, GREEN M A, WÜRFEL P. Improving solar cell efficiencies by down-conversion of high-energy photons[J]. Journal of applied physics, 2002, 92(3): 1668-1674. DOI: 10.1063/1.1492021.

[8] RICHARDS B S. Luminescent layers for enhanced silicon solar cell performance: Down-conversion[J]. Solar energy materials and solar cells, 2006, 90(9): 1189-1207. DOI: 10.1016/j.solmat.2005.07.001.

[9] HUANG X Y, HAN S Y, HUANG W, et al. Enhancing solar cell efficiency: the search for luminescent materials as spectral converters[J]. Chemical society reviews, 2013, 42: 173-201. DOI: 10.1039/C2CS35288E.

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