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Thermoelectric Property of Si1−xGex/B Multilayer Thin Film Prepared by Magnetron Sputtering
1. CAS Key Laboratory of Renewable Energy, Guangzhou Institute of Energy Conversion, Chinese Academy of Sciences, Guangzhou 510640, China;
2. University of Chinese Academy of Sciences, Beijing 100049, China;
3. Guilin University of Electronic Technology, Guangxi Guilin 541004, China
Received date: 2016-05-02
Revised date: 2016-07-27
Online published: 2016-10-28
Unique structure (SiGe/B) based multilayer film prepared by magnetron sputtering was designed with purposes of improving electrical conductivity and Seebeck coefficient, and reducing thermal conductivity. The multilayer film contains 5 periods and each of them consisted of a 60-nm-thick Si60Ge40 layer and a 0.55-nm-thick B layer. Its thermoelectric performance was investigated and results showed that the best doping time of B was 30 s. When the annealing temperature was 650oC, the optimized film showed greatly enhanced Seebeck coefficient up to 6.75 × 10−4 V/K with decreased electrical resistivity of 1.6×10−5 Ω•m, and the maximum power factor was 0.026 W/m•K2.
DU Xin , MIAO Lei , LIU Cheng-yan , WANG Xiao-yang . Thermoelectric Property of Si1−xGex/B Multilayer Thin Film Prepared by Magnetron Sputtering[J]. Advances in New and Renewable Energy, 2016 , 4(5) : 345 -350 . DOI: 10.3969/j.issn.2095-560X.2016.05.002
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